Crystallographic and Ferroelectric Properties Subjected to Two-Dimensional Stress in c-Axis-Oriented PbTiO3 Thin Films
- 1 September 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (9S)
- https://doi.org/10.1143/jjap.33.5317
Abstract
Relationships among Curie point, spontaneous polarization, lattice parameters with consideration of spontaneous strain and piezoelectric charge coefficient were calculated as functions of two-dimensional stress in c-axis-oriented PbTiO3 thin films using a modified Devonshire form of the elastic Gibbs free energy. A compressive stress of approximately 500 MPa was predicted by a finite-element method analysis of the PbTiO3/Pt/Ti/SiO2/Si structure. A 90° C shift in the Curie point was estimated from the compressive stress, and shifts of other properties were accompanied with a shift of phase transition.Keywords
This publication has 7 references indexed in Scilit:
- Stress induced shift of the Curie point in epitaxial PbTiO3 thin filmsApplied Physics Letters, 1991
- Ferroelectric MemoriesScience, 1989
- Thermodynamic theory of PbTiO3Journal of Applied Physics, 1987
- Piezoelectricity of c-axis oriented PbTiO3 thin filmsApplied Physics Letters, 1987
- Preparation of c-axis oriented PbTiO3 thin films and their crystallographic, dielectric, and pyroelectric propertiesJournal of Applied Physics, 1986
- Dielectric properties of fine-grained barium titanate ceramicsJournal of Applied Physics, 1985
- X-ray and neutron diffraction study of ferroelectric PbTiO2Acta Crystallographica, 1956