Very high energy implants of boron into silicon
- 1 February 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 37-38, 951-954
- https://doi.org/10.1016/0168-583x(89)90332-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Range calculations at high ion energy-part IRadiation Effects, 1988
- Range distributions of MeV implants in silicon IINuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Megavolt arsenic implantation into siliconThin Solid Films, 1982
- Comment on range distributions of energetic ions in matterPhysical Review A, 1982
- Boron in Near‐Intrinsic and Silicon under Inert and Oxidizing Ambients—Diffusion and SegregationJournal of the Electrochemical Society, 1978