Observation of discrete resistance levels in large area graded gap diodes at low temperatures
- 15 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (24) , 1652-1653
- https://doi.org/10.1063/1.97256
Abstract
We have investigated the low‐temperature properties of a GaAs n‐i‐n diode where the intrinsic region consists of a linearly graded gap of AlGaAs, and is surrounded by lightly doped GaAs regions. The current‐voltage (I‐V) characteristics are strongly asymmetric and are dominated by the graded cap. Unstable I‐V characteristics are obtained in forward bias. Random switching is seen between resistance levels. This is ascribed to single electron events at traps near the abrupt heterojunction of the graded gap—the first such observation in a large area device.Keywords
This publication has 9 references indexed in Scilit:
- 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistorsApplied Physics Letters, 1985
- Nature of Single-Localized-Electron States Derived from Tunneling MeasurementsPhysical Review Letters, 1985
- Beryllium and silicon doping studies in AlxGa1−xAs and new results on persistent photoconductivityJournal of Vacuum Science & Technology B, 1985
- Composition ofNoise in Metal-Insulator-Metal Tunnel JunctionsPhysical Review Letters, 1984
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984
- Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conductionJournal of Vacuum Science and Technology, 1982
- New rectifying semiconductor structure by molecular beam epitaxyApplied Physics Letters, 1980
- Tunneling in a finite superlatticeApplied Physics Letters, 1973
- Microplasmas in SiliconPhysical Review B, 1957