Near-equilibrium LPE growth of In1−xGaxAsyP1−y lattice matched to InP
- 1 December 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 60 (2) , 235-238
- https://doi.org/10.1016/0022-0248(82)90094-x
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Prevention of InP surface decomposition in liquid phase epitaxial growthApplied Physics Letters, 1980
- 1.11-1.67 µmIEEE Journal of Quantum Electronics, 1980
- Near-equilibrium LPE growth of low threshold current density In1−xGaxAsyP1−y(λ=1.35 μm) DH lasersApplied Physics Letters, 1979
- Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μmApplied Physics Letters, 1978
- Growth of Lattice-Matched InGaAsP/InP Double-Heterostructures by the Two-Phase Supercooled Solution TechniqueJapanese Journal of Applied Physics, 1977
- GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE ApparatusJapanese Journal of Applied Physics, 1976
- Growth and characterization of InGaAsP–InP lattice-matched heterojunctionsJournal of Vacuum Science and Technology, 1976
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976