Directional effects in ion scattering by semiconductor crystals
- 1 January 1972
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 12 (1) , 105-109
- https://doi.org/10.1080/00337577208231127
Abstract
The spatial distributions of fast particles ejected from silicon and germanium targets bombarded with 10–30 keV energy noble gas ions have been experimentally studied. All the experiments were performed for both crystalline and amorphized target surfaces. The obtained distributions were found strongly influenced by the crystalline structure of the target.Keywords
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