Design, Fabrication, and Evaluation of BARITT Devices for Doppler System Applications
- 1 December 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 24 (12) , 943-948
- https://doi.org/10.1109/tmtt.1976.1129004
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Small-signal characteristics of semiconductor punch-through injection and transit-time diodesSolid-State Electronics, 1973
- Small-signal analysis of punch-through injection microwave devicesSolid-State Electronics, 1973
- On the microwave activity of punchthrough injection transit-time structuresIEEE Transactions on Electron Devices, 1972
- Transit-Time Oscillations in BARITT DiodesJournal of Applied Physics, 1972
- A Low-Noise Metal-Semiconductor-Metal (MSM) Microwave OscillatorBell System Technical Journal, 1971
- Negative Resistance Arising from Transit Time in Semiconductor DiodesBell System Technical Journal, 1954