Valence-alternation-pair model for interface states, fixed oxide charges, radiation defects, and impurities of the Si-SiO2interface
- 20 December 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (35) , 6553-6559
- https://doi.org/10.1088/0022-3719/17/35/021
Abstract
The valence-alternation-pair model for non-crystalline SiO2 and its application to various defect properties of this material are briefly reviewed. It is shown that this model, which assumes the existence of pairs of over- and under-coordinated oxygen atoms, enables a consistent explanation of the origin and nature of interface states, fixed oxide charges, and radiation defects of the microelectronic Si-SiO2 interface and an interpretation of the role of its most important impurities, i.e. hydrogen and sodium.Keywords
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