GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

This publication has 26 references indexed in Scilit:

• AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates
  Materials Science and Engineering: B, 2002
• GaN-based modulation doped FETs and UV detectors
  Published by Elsevier ,2001
• AlGaN-Based Photodetectors Grown by Gas Source Molecular Beam Epitaxy with Ammonia
  Physica Status Solidi (a), 2001
• High-speed visible-blind GaN-based indium–tin–oxide Schottky photodiodes
  Applied Physics Letters, 2001
• Al Ga1−N for solar-blind UV detectors
  Journal of Crystal Growth, 2001
• Gain mechanism in GaN Schottky ultraviolet detectors
  Applied Physics Letters, 2001
• Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer
  Japanese Journal of Applied Physics, 2001
• High-performance GaN p-n junction photodetectors for solar ultraviolet applications
  Semiconductor Science and Technology, 1998
• Low noise p-π-n GaN ultraviolet photodetectors
  Applied Physics Letters, 1997
• Kinetics of photoconductivity in n-type GaN photodetector
  Applied Physics Letters, 1995