A Novel Approach to the Assessment of Semiconductor Hetero-Interfaces in Multilayer Structures
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Influence of test signal frequency on the determination of band discontinuity of GaAs/AlGaAs heterojunctions from capacitance-voltage measurementsJournal of Applied Physics, 1988
- Influence of the donor depth on the determination of the band discontinuity of isotype heterojunctions by the capacitance-voltage techniqueApplied Physics Letters, 1986
- Deep level characterization of AlGaAs and selectively doped N-AlGaAs/GaAs heterojunctionsJournal of Vacuum Science & Technology B, 1985
- Band discontinuity for GaAs/AlGaAs heterojunction determined by C-V profiling techniqueJournal of Applied Physics, 1985
- Effects of prelayers on minority-carrier lifetime in GaAs/AlGaAs double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Interface states in GaAs/AlxGa1−xAs heterostructures grown by organometallic vapor phase epitaxyApplied Physics Letters, 1983
- Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxyApplied Physics Letters, 1982
- On the theory of Debye averaging in the C-V profiling of semiconductorsSolid-State Electronics, 1981
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980
- Interfacial recombination velocity in GaAlAs/GaAs heterostructuresApplied Physics Letters, 1978