Influence of test signal frequency on the determination of band discontinuity of GaAs/AlGaAs heterojunctions from capacitance-voltage measurements

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Abstract
We have simulated the effects of deep donors in AlGaAs (DX centers) in the determination of band discontinuity (ΔEc) of GaAs/AlGaAs heterojunctions using the capacitance‐voltage measurements. In addition to the partial ionization of the deep donors, the ability of the traps (deep donors) to respond to the test signal used for capacitance measurement has also been included in the analysis. We find that the deep‐level effects lead to an underestimation or overestimation of ΔEc, depending upon whether the frequency of the test signal is low or high, respectively, as compared to the emission rate of the traps.