Modelling of silicon nitride deposition by 254 nm Hg-photosensitization and 185 nm photolysis of SiH4/NH3 gas mixture
- 1 January 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 36 (1-4) , 205-212
- https://doi.org/10.1016/0169-4332(89)90915-x
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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