Surface reaction and recombination of the SiH3 radical on hydrogenated amorphous silicon

Abstract
Mercury photosensitized decomposition of SiH4 is used to study surface reactions of SiH3 on hydrogenated amorphous silicon (a‐Si:H). The method involves modeling of gas phase production, reaction and diffusion to the walls of reactive species, in a parallel plate reactor, combined with measurements of surface reflection coefficient of SiH3, spatial density profile of SiH3, and a‐Si:H deposition rate. The reaction probability of SiH3 on a‐Si:H varies from 0.1 up to 0.2 in the 40–350 °C temperature domain. However, a large fraction (≥60%) of adsorbed SiH3 recombine on the surface, instead of being incorporated in the film.

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