Control of electron population by intersubband optical excitation in potential-inserted double quantum well structures
- 25 July 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (4) , 424-426
- https://doi.org/10.1063/1.112321
Abstract
A remarkable change in photoluminescence spectra was observed when CO2 laser light was incident to induce an intersubband transition in a novel asymmetric double quantum well structure where the second subbands of both wells are resonantly coupled, while the ground subbands are not. It is found that the observed change originates from the CO2‐laser‐induced transfer of electrons from one well to the other, demonstrating the controllability of electron population by means of infrared light.Keywords
This publication has 9 references indexed in Scilit:
- In situ scanning-tunneling-microscopy studies of current driven mass transport in AgJournal of Applied Physics, 1993
- Photoluminescence up-conversion induced by intersubband absorption in asymmetric coupled quantum wellsPhysical Review Letters, 1993
- Effect of collisions and relaxation on coherent resonant tunneling: Hole tunneling in GaAs/As double-quantum-well structuresPhysical Review B, 1990
- Time-resolved Raman measurements of intersubband relaxation in GaAs quantum wellsPhysical Review Letters, 1989
- Tailoring the intersubband absorption in quantum wellsApplied Physics Letters, 1989
- Experimental probing of quantum-well eigenstatesPhysical Review Letters, 1989
- Optical quantum-confined Stark effect in GaAs quantum wellsPhysical Review Letters, 1987
- Intersubband relaxation in GaAs-As quantum well structures observed directly by an infrared bleaching techniquePhysical Review Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985