Molecular beam epitaxy and reconstructed surfaces
- 1 November 1985
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 38 (3) , 171-179
- https://doi.org/10.1007/bf00616494
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Initial stages of silicon molecular-beam epitaxy: Effects of surface reconstructionPhysical Review B, 1985
- Summary Abstract: Observation and properties of the Ge(111)-7×7 surface from Si(111)/Ge structuresJournal of Vacuum Science & Technology A, 1985
- The use of pulsed laser irradiation in silicon molecular beam epitaxy: A comparative low energy electron diffraction studyJournal of Vacuum Science & Technology B, 1983
- Surface stacking sequence and (7 × 7) reconstruction at Si(111) surfacesPhysical Review B, 1983
- Nature of vicinal laser-annealed Si(111) surfacesPhysical Review B, 1981
- Atomic Displacements in the Si(111)-(7×7) SurfacePhysical Review Letters, 1980
- Si(001) surface studies using high energy ion scatteringNuclear Instruments and Methods, 1980
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979
- Surface structure analysis by means of Rutherford scattering: Methods to study surface relaxationNuclear Instruments and Methods, 1976
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951