Density-Functional Treatment of an Exactly Solvable Semiconductor Model
- 5 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (18) , 1968-1971
- https://doi.org/10.1103/physrevlett.56.1968
Abstract
The band-gap problem is studied for an exactly solvable semiconductor model. The exact exchange-correlation potential is constructed and its discontinuity is studied. Depending on the parameter range, a large or a small discontinuity is obtained. The "scissor-operator" method is compared with the local-density approximation for an impurity calculation. In general, the local-density approximation is closer to the exact solution. Some general features of the density-functional formalism are illustrated.Keywords
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