GaAs cap layer growth and In-segregation effects on self-assembled InAs-quantum dots monitored by optical techniques
- 15 December 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 195 (1-4) , 530-539
- https://doi.org/10.1016/s0022-0248(98)00650-2
Abstract
No abstract availableKeywords
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