Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers
- 15 January 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (2) , 664-670
- https://doi.org/10.1063/1.360810
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- InGaAs/InP superlattice mixing induced by Zn or Si diffusionApplied Physics Letters, 1988
- Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structuresApplied Physics Letters, 1988
- Kinetics of silicon-induced mixing of AlAs-GaAs superlatticesApplied Physics Letters, 1987
- Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlatticesApplied Physics Letters, 1987
- Dose-dependent mixing of AlAs-GaAs superlattices by Si ion implantationApplied Physics Letters, 1986
- Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs-GaxAl1−xAs interfacesApplied Physics Letters, 1986
- Interdiffusion of Al and Ga in Si-Implanted GaAs–AlAs SuperlatticesJapanese Journal of Applied Physics, 1984
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982
- IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavityApplied Physics Letters, 1981
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981