Kinetics of silicon-induced mixing of AlAs-GaAs superlattices
- 22 June 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (25) , 1823-1825
- https://doi.org/10.1063/1.97709
Abstract
The intermixing of AlAs-GaAs superlattices has been investigated as a function of Si concentration following anneals in the range of 500 to 900 °C. The superlattice samples were grown by molecular beam epitaxy and the near surface layers were doped with silicon at concentrations of 2×1017 to 5×1018 cm−3. Si and Al depth profiles were measured with secondary ion mass spectrometry (SIMS). The diffusion length and activation energy of Al as a function of silicon dopant concentration were derived from the SIMS data. In the temperature range studied a single activation energy for the Al diffusion of ∼4 eV was observed, and the Al diffusion coefficients increased rapidly with Si concentration.Keywords
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