Nucleation Phenomena during Titanium Silicon Reaction
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Reaction of titanium with germanium and silicon-germanium alloysApplied Physics Letters, 1989
- Kinetics of titanium silicide formation on single-crystal Si: Experiment and modelingJournal of Applied Physics, 1988
- Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealingJournal of Applied Physics, 1988
- The formation of an amorphous silicide by thermal reaction of sputter-deposited Ti and Si layersJournal of Applied Physics, 1988
- Nucleation of a new phase from the interaction of two adjacent phases: Some silicidesJournal of Materials Research, 1988
- Amorphous Ti-Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayersJournal of Applied Physics, 1987
- Ambient Gas Effects on the Reaction of Titanium with SiliconJournal of the Electrochemical Society, 1985
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- First Phase Nucleation And Growth Of Titanium Disilicide With An iPhasis On The Influence Of OxygenMRS Proceedings, 1985
- Epitaxial growth of Si deposited on (100) SiApplied Physics Letters, 1980