Possible contribution of SiH2 and SiH3 in the plasma-induced deposition of amorphous silicon from silane
- 30 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (18) , 1766-1768
- https://doi.org/10.1063/1.103221
Abstract
A self‐consistent quantitative analysis of recent kinetic data on the role of di‐ and trisilane in the plasma‐induced deposition of amorphous silicon from monosilane confirms the conclusion that the dominant reactive intermediate responsible for the formation of di‐ and trisilane and, consequently, for the deposition of a high quality amorphous silicon is SiH2. The data show that the SiH3 radical may play only a negligible, if any, role in this process.Keywords
This publication has 20 references indexed in Scilit:
- Diffusion Coefficient and Reaction Rate Constant of the SiH3 Radical in Silane PlasmaJapanese Journal of Applied Physics, 1989
- Organosilicon survey 1986-the SiliconCarbon bondJournal of Organometallic Chemistry, 1989
- From the Understanding of the Reaction Mechanism Towards Optimizing the Deposition Rate and Optoelectronic Properties of a-Si:HMRS Proceedings, 1989
- On the modulation of electron energy distribution function in radiofrequency SiH4, SiH4?H2 bulk plasmasPlasma Chemistry and Plasma Processing, 1988
- Kohlenstoff und Silicium – wie verschieden können homologe Elemente sein?Chemie in Unserer Zeit, 1988
- Mechanisms of Plasma Induced Silicon Deposition and the Control of the Properties of the DepositMRS Proceedings, 1988
- The infrared laser photochemistry of silaneSpectrochimica Acta Part A: Molecular Spectroscopy, 1987
- Dominant reaction channels and the mechanism of silane decomposition in a H2-Si(s)-SiH4 glow dischargePlasma Chemistry and Plasma Processing, 1987
- The 147-nm photolysis of monosilaneJournal of the American Chemical Society, 1979
- Kinetics of the decomposition of 1,1,1-trimethyldisilane and of trimethylsilylgermane and of relative rates of silylene insertion into silicon-hydrogen bondsJournal of the American Chemical Society, 1977