Dominant reaction channels and the mechanism of silane decomposition in a H2-Si(s)-SiH4 glow discharge
- 1 June 1987
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 7 (2) , 139-153
- https://doi.org/10.1007/bf01019174
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloridePlasma Chemistry and Plasma Processing, 1986
- Mono- and disilicon radicals in silane and silane-argon dc dischargesJournal of Applied Physics, 1986
- Mechanism of the direct current plasma discharge decomposition of disilaneThe Journal of Physical Chemistry, 1984
- Decomposition kinetics of a static direct current silane glow dischargeThe Journal of Physical Chemistry, 1984
- Basic phenomena in reactive low pressure plasmas used for deposition and etching-current statusPublished by Walter de Gruyter GmbH ,1984
- Chemical relaxation study of the heterogeneous silicon-hydrogen system under plasma conditionsPlasma Chemistry and Plasma Processing, 1983
- Kinetic study of the heterogeneous Si/H system under low-pressure plasma conditions by means of mass spectrometryPlasma Chemistry and Plasma Processing, 1982
- Ion and radical reactions in the silane glow discharge deposition of a-Si:H filmsPlasma Chemistry and Plasma Processing, 1982
- Highlights of preparative solid state chemistry in low pressure plasmasPublished by Walter de Gruyter GmbH ,1982
- Mass spectrometry of a silane glow discharge during plasma deposition of a-Si: H filmsThin Solid Films, 1980