Thermal Conductivity Measurements of Silicon from 30° to 425°C

Abstract
Measurements on single-crystal silicon show that the thermal conductivity varies nearly as T1, from 1.25±0.19 w/cm C° at 30°C, to 0.46±0.07 w/cm C° at 425°C. The series comparative method employed reduces errors due to radiation, thermocouple calibration, and contacts. The charged-carrier contribution to the conductivity is less than 1% at 425°C. The lattice conductivity is discussed in terms of phonon-phonon scattering at 425°C and in terms of isotope and phonon-phonon scattering at 30°C.