Evaluation of tight-binding models for deep defect levels in semiconductors
- 15 February 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (4) , 2781-2785
- https://doi.org/10.1103/physrevb.25.2781
Abstract
Two of the fundamental assumptions used in contemporary tight-binding models for calculating the energies of deep defect levels in semiconductors are examined through comparison with a general model that avoids these assumptions. It is found that these assumptions are likely to invalidate the chemical trends predicted by the tight-binding models for the ordering of the impurity energy levels with atomic potentials.Keywords
This publication has 23 references indexed in Scilit:
- The electronic structure of deep SP-bonded acceptor impurities in semiconductorsSolid State Communications, 1981
- Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in siliconPhysical Review B, 1980
- New self-consistent approach to the electronic structure of localized defects in solidsPhysical Review B, 1979
- Self-consistent pseudopotential calculation of electronic states associated with a reconstructed silicon vacancyPhysical Review B, 1979
- Self-Consistent Method for Point Defects in Semiconductors: Application to the Vacancy in SiliconPhysical Review Letters, 1978
- Self-Consistent Green's-Function Calculation of the Ideal Si VacancyPhysical Review Letters, 1978
- Localized defects in III-V semiconductorsPhysical Review B, 1976
- Two-electron impurity states in GaP:OJournal of Physics C: Solid State Physics, 1975
- Theory of Scattering in SolidsJournal of Mathematical Physics, 1964
- Simplified Impurity CalculationPhysical Review B, 1954