Electronically active defects in cw beam-annealed Si. I. Electron-beam-induced current
- 15 April 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8) , 3072-3082
- https://doi.org/10.1063/1.333303
Abstract
Electron-beam-induced current (EBIC) and low-temperature photoluminescence are used to study minority-carrier recombination processes in ion-implanted Si subjected to scanned laser or electron-beam annealing. Dark stripes parallel to the laser scanning direction always appear in the EBIC display of laser-annealed samples. The contrast of these dark stripes increases with laser power, while the charge collection efficiency decreases. Both EBIC and photoluminescence results indicate that damage is induced by the annealing laser beam, and that this laser-induced damage extends several microns below the implanted layer. On the other hand, electron-beam annealing yields a laterally uniform pattern and superior charge-collection efficiency.This publication has 20 references indexed in Scilit:
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