Silicon-based photonic crystal nanocavity light emitters

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Abstract
The authors have demonstrated an up to sevenfold enhancement of photoluminescence from silicon-rich silicon nitride film due to a single photonic crystal cavity. The enhancement is partially attributed to the Purcell effect [Purcell, Phys. Rev. 69, 681 (1946)], which is predicted to be up to 35-fold by finite difference time-domain calculations for emitters spectrally and spatially aligned with the electric field. Experimentally measured cavity quality factors vary in the range of 200–300, showing excellent agreement with calculations. The emission peak can be tuned to any wavelength in the 600–800nm range.
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