1/f noise of deformed crystals

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Abstract
It is investigated whether dislocations produced by plastic deformation have an effect on resistivity, mobility, free‐carrier density, and 1/f noise in p‐type silicon and n‐type germanium. In all cases the resistivity increases and the mobility decreases with increasing deformation. The relative 1/f noise spectral density can be represented by SV(f)/V2=α/Nf, where V is the voltage, f is the frequency, N is the total number of free carriers, and α is a constant. The constant α is found to be independent of the degree of plastic deformation. It is found that the 1/f noise in liquid mercury can also be characterized by the above expression with the same constant α.