Photoluminescence Measurements for Cd-Diffused InP p-n Junction
- 1 June 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (6)
- https://doi.org/10.1143/jjap.20.1113
Abstract
An attempt to investigate the diffusion profile of Cd into InP has been carried out by photoluminescence measurements. The PL-intensity profile of a Cd-related D-A pair emission line was measured by scanning the excitation laser beam spot over an angle-lapped Cd-diffused InP surface. The profile agrees well with the previously-reported abrupt Cd-diffusion profile, and the depths are very close to those measured by EBIC. These results suggest that the essential features of the concentration profile of the Cd-acceptor in InP can easily be measured by photoluminescence.Keywords
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