Structural properties of interfaces between II-VI and III-V semiconductors
- 1 January 1991
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. T35, 268-272
- https://doi.org/10.1088/0031-8949/1991/t35/053
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- RHEED, XPS, HRTEM and channeling studies of molecular beam epitaxy growth of CdTe On (001) GaAsApplied Surface Science, 1990
- Growth control of CdTe/CdZnTe (001) strained-layer superlattices by reflection high-energy electron diffraction oscillationsApplied Physics Letters, 1989
- Structure of CdTe-Cd1−xMnxTe multiple quantum wells grown on (001) InSb substrates by molecular beam epitaxyApplied Physics Letters, 1989
- Growth of (111) CdTe on tilted (001) GaAsApplied Physics Letters, 1989
- Polarity determination of CdTe crystals by electron diffractionJournal of Applied Physics, 1988
- Polarity determination in compound semiconductors by channeling: Application to heteroepitaxyApplied Physics Letters, 1988
- Generation of misfit dislocations in semiconductorsJournal of Applied Physics, 1987
- Magnetically tunable diluted magnetic semiconductor (Cd, Mn)Te quantum well laserApplied Physics Letters, 1986
- Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substratesApplied Physics Letters, 1985
- Growth of low dislocation density CdTe films on hydroplaned CdTe substrates by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983