Integration of an injection laser with a Gunn oscillator on a semi-insulating GaAs substrate
- 15 June 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (12) , 806-807
- https://doi.org/10.1063/1.89922
Abstract
The integration of an injection semiconductor laser with an active electronic device (Gunn oscillator) in a single epitaxial crystal device is demonstrated.Keywords
This publication has 5 references indexed in Scilit:
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- Double-heterostructure GaAs-GaAlAs injection lasers on semi-insulating substrates using carrier crowdingApplied Physics Letters, 1977
- Integrated optics and new wave phenomena in optical waveguidesReviews of Modern Physics, 1977
- Microwave Field-Effect Transistors - 1976IEEE Transactions on Microwave Theory and Techniques, 1976
- Gunn device gigabit rate digital microcircuitsIEEE Journal of Solid-State Circuits, 1975