GaAs-GaAlAs injection lasers on semi-insulating substrates using laterally diffused junctions
- 1 April 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (7) , 410-412
- https://doi.org/10.1063/1.90087
Abstract
Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components.Keywords
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