Scanning electron micrographs of self-quenched breakdown regions in Al–SiO2–(100)Si structures
- 1 August 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (3) , 140-142
- https://doi.org/10.1063/1.1655413
Abstract
SEM photographs of regions of breakdown produced in vacuum (10−3 Torr) are exhibited for four basic Al–SiO2–(100)Si configurations: p substrate, field plate + and field plate ‐, and n substrate, field plate + and field plate ‐. With p‐Si and field plate +, the geometry of the breakdown region reflects the anisotropic conductivity of hot electrons in Si along the (100) plane of the substrate wafer. Some properties of the breakdown correlate with the nature of the substrate surface channel (inversion versus accumulation); other properties correlate with the field‐plate polarity.Keywords
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