Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM
- 1 March 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 48 (1-4) , 448-452
- https://doi.org/10.1016/0168-583x(90)90158-q
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Experimental and calculated range moments of deep implantsMaterials Science and Engineering: B, 1989
- Application of heavy ions to high depth resolution RBSNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- An MeV facility for materials researchNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studiesSurface Science, 1986
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- High energy ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Laser processing of UHV-deposited thin silicon filmsApplications of Surface Science, 1982
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Ranges and range theoriesRadiation Effects, 1980