Experimental and calculated range moments of deep implants
- 28 February 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 2 (1) , 55-61
- https://doi.org/10.1016/0921-5107(89)90076-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeVNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Range distributions of MeV implants in silicon IINuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Three-dimensional distributions of ion range and damage including recoil transportNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Energy levels of light nuclei A = 16–17Nuclear Physics A, 1986
- Energy anddependences of energy straggling for fast proton beams passing through solidsPhysical Review B, 1986
- Low temperature implantation and analysis techniques for hydrogen in metalsMaterials Science and Engineering, 1985
- A new measurement of the 429 keV 15N(p,αγ)12C resonance. Applications of the very narrow width fouNd to 15N and 1H depth location: I. Resonance width measurementNuclear Instruments and Methods in Physics Research, 1983
- An in-beam-line low-level system for nuclear reaction γ-raysNuclear Instruments and Methods in Physics Research, 1983
- Pearson distributions for ion rangesApplied Physics Letters, 1983
- Concentration profiles of boron implantations in amorphous and polycrystalline siliconRadiation Effects, 1975