Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (3) , 573-578
- https://doi.org/10.1109/16.75168
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- A surrounding gate transistor (SGT) cell for 64/256 Mbit DRAMsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Effects of a new trench-isolated transistor using sidewall gatesIEEE Transactions on Electron Devices, 1989
- Analysis of conduction in fully depleted SOI MOSFETsIEEE Transactions on Electron Devices, 1989
- Subthreshold slope of thin-film SOI MOSFET'sIEEE Electron Device Letters, 1986