Growth of InP single crystals by growth-rate controlled synthesis, solute diffusion technique
- 1 September 1984
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (2) , 639-643
- https://doi.org/10.1016/0022-0248(84)90470-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Grain size dependence of mobility in polycrystalline n-indium phosphideJournal of Applied Physics, 1983
- Improved SSD growth of InP single crystalsJournal of Crystal Growth, 1981
- Preparation of high-purity InP by the synthesis, solute diffusion techniqueJournal of Applied Physics, 1981
- Silicon Contamination of InP Synthesized under High Phosphorus PressureJournal of the Electrochemical Society, 1981
- Improvements in SSD Growth of GaPJapanese Journal of Applied Physics, 1979
- Large-sized InP single crystals by the synthesis, solute diffusion techniqueJournal of Crystal Growth, 1979
- Solution growth and some properties of GaP bulk crystalsActa Physica Academiae Scientiarum Hungaricae, 1978
- Growth of GaP single crystals by the synthesis, solute diffusion methodJournal of Crystal Growth, 1976
- A new method of growing GaP crystals for light-emitting diodesProceedings of the IEEE, 1973
- The redistribution of solute atoms during the solidification of metalsActa Metallurgica, 1953