Comparative Study of Al2O3 Optical Crystalline Thin Films Grown by Vapor Combinations of Al(CH3)3/N2O and Al(CH3)3/H2O2
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12S)
- https://doi.org/10.1143/jjap.32.6137
Abstract
We compared the use of nitrous oxide (N2O) and hydrogen peroxide (H2O2) as the oxidant in digital chemical vapor deposition to obtain high-quality optical crystalline thin films of Al2O3. Optical constants and thicknesses of these films were investigated in terms of growth temperature, by using variable-angle spectroscopic ellipsometry.Keywords
This publication has 6 references indexed in Scilit:
- Low-Temperature Growth of Thin Films of Al2O3 by Sequential Surface Chemical Reaction of trimethylaluminum and H2O2Japanese Journal of Applied Physics, 1991
- Properties of aluminium oxide films prepared by plasma-enhanced metal-organic chemical vapour depositionThin Solid Films, 1990
- Sequential surface chemical reaction limited growth of high quality Al2O3 dielectricsApplied Physics Letters, 1989
- Metalorganic molecular beam epitaxy of γ-Al2O3 films on Si at low growth temperaturesApplied Physics Letters, 1988
- Epitaxial Al2O3 films on Si by low-pressure chemical vapor depositionApplied Physics Letters, 1988
- Growth of α-Al2O3 films by molecular layer epitaxyApplied Physics Letters, 1987