Buried monocrystalline aluminum layers in beryllium using ion implantation
- 17 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (25) , 2651-2653
- https://doi.org/10.1063/1.103793
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Formation of a nearly pure aluminum layer in beryllium using ion implantationApplied Physics Letters, 1989
- Synthesis of Buried Silicon Compounds Using Ion ImplantationMRS Proceedings, 1987
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985