GaInP multiwafer growth by LP-MOVPE for HBTs, lasers, LEDs or solar cells
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 278-285
- https://doi.org/10.1016/0022-0248(92)90472-u
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substratesJournal of Crystal Growth, 1991
- Layer uniformity in a multiwafer MOVPE reactor for III–V compoundsJournal of Crystal Growth, 1991
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- OMVPE of GaInAs on a spinning substrateJournal of Crystal Growth, 1988
- Extremely uniform, reproducible growth of device quality InGaAsP:InP heterostructures in the T-shaped reactor at atmospheric pressureJournal of Crystal Growth, 1988
- Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energyApplied Physics Letters, 1987