Low temperature growth of epitaxial and amorphous silicon in a hydrogen-diluted silane plasma
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 673-676
- https://doi.org/10.1016/s0022-3093(05)80210-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor depositionJournal of Electronic Materials, 1990
- Control of silicon network structure in plasma depositionJournal of Non-Crystalline Solids, 1989
- Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250°CJapanese Journal of Applied Physics, 1987
- Defects in single-crystal silicon induced by hydrogenationPhysical Review B, 1987