AC conductivity of (AlGa)AsGaAs heterostructures and silicon MOSFETS in the quantum Hall regime
- 3 April 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 170 (1-2) , 180-186
- https://doi.org/10.1016/0039-6028(86)90959-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The complex capacitance of Si inversion layers in the quantized resistance regimeSurface Science, 1984
- Frequency-enhanced fractional quantisation in GaAs-GaAlAs heterojunctionsJournal of Physics C: Solid State Physics, 1984
- Frequency-induced electron delocalisation and fractional quantisation in silicon inversion layersJournal of Physics C: Solid State Physics, 1984
- Quantized magnetoresistance in two-dimensional electron systemsPhysical Review B, 1983