Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering
- 1 May 1990
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (5) , 413-418
- https://doi.org/10.1007/bf02657999
Abstract
No abstract availableKeywords
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