Growth and evaluation of lpe graded composition AlxGa1−xAs layers for high efficiency graded bandgap solar cells
- 1 November 1977
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 6 (6) , 645-658
- https://doi.org/10.1007/bf02660342
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- High−efficiency graded band−gap AlxGa1−xAs−GaAs solar cellApplied Physics Letters, 1975
- Rutherford back-scattering as a tool to determine electronic stopping powers in solidsThin Solid Films, 1973
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Ga[sub 1−x]Al[sub x]As-GaAs P-P-N Heterojunction Solar CellsJournal of the Electrochemical Society, 1973
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- Heterojunction solar cell calculationsSolid-State Electronics, 1970
- Calculated efficiencies of practical GaAs and Si solar cells including the effect of built-in electric fieldsSolid-State Electronics, 1970
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970
- A technique for the preparation of low-threshold room-temperature GaAs laser diode structuresIEEE Journal of Quantum Electronics, 1969
- Preparation and Properties of AlAs-GaAs Mixed CrystalsJournal of the Electrochemical Society, 1966