Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
- 1 September 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (9A) , L744-746
- https://doi.org/10.1143/jjap.24.l744
Abstract
The preparation of high purity a-Si:H films is discussed in order to improve material quality and to reduce the Staebler-Wronski (S-W) effect. This letter presents the preparation technique and its relationship to the S-W, or light soaking effect. By using a hot-wall type symmetric-plasma CVD system and high rate deposition method, contaminant impurity levels in a-Si:H films are significantly reduced. Photoconductivity measurements of the films show that light soaking effects are reduced with oxygen content decreases to as low as 4×1017/cm3.Keywords
This publication has 3 references indexed in Scilit:
- ‘Clean’ a-Si:H prepared in a UHV systemJournal of Non-Crystalline Solids, 1984
- Investigation of the hydrogen and impurity contents of amorphous silicon by secondary ion mass spectrometrySolar Cells, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977