InGaAs dual-pin detector with very symmetric properties for use in coherent optical receivers
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (12) , 583-584
- https://doi.org/10.1109/55.43147
Abstract
A dual InGaAs p-i-n photodiode structure based on metalorganic vapor-phase epitaxy or liquid-phase epitaxy layers grown on planar semi-insulating InP substrates is discussed. The photodetector shows very symmetric properties for the two devices. It is shown that an additional InP p-n junction beneath the photodiodes effectively blocks leakage currents through the substrate and results in dark currents on the order of 100 pA for both of the electrically connected photodiodes.Keywords
This publication has 2 references indexed in Scilit:
- Fabrication of monolithic twin-GaInAs pin photodiode for balanced dual-detector optical coherent receiversElectronics Letters, 1988
- Balanced dual-detector receiver for optical heterodyne communication at Gbit/s ratesElectronics Letters, 1986