A simple approximation for high-temperature properties of the injection laser
- 1 November 1969
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 2 (11) , 1549-1553
- https://doi.org/10.1088/0022-3727/2/11/309
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Theoretical effects of exponential band tails on the properties of the injection laserSolid-State Electronics, 1969
- Temperature behavior of stimulated emission delays in GaAs diodes and a proposed trapping modelIEEE Journal of Quantum Electronics, 1968
- Lasing wavelength of a GaAs injection laserSolid-State Electronics, 1968
- Temperature Dependence of Laser Threshold Current Density and Emission Spectra in Electron‐Beam Pumped Gallium Arsenide LasersPhysica Status Solidi (b), 1968
- Temperature dependence of the delay time between the current pulse and the laser emission of GaAs laser diodesElectronics Letters, 1967
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967
- Approximate calculation of the spectral function for the stimulated recombination radiation in semiconductorsSolid-State Electronics, 1965
- P-N junction lasersProceedings of the IEEE, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964