Temperature and pressure dependence of the Γ1celectron mobility in GaSb

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Abstract
The temperature dependence of the electron mobility in the Gamma 1c band has been calculated for temperatures at, and above, room temperature and compared with experimental results. The relaxation time approximation has been applied with the following scattering mechanisms: interband and intraband polar optical, acoustic, charge-centre and space-charge. It is concluded that charge-centre scattering is dominant in the low temperature region and that some space-charge scattering may be present also. In addition, measurements of the Hall coefficient and resistivity as a function of hydrostatic pressures up to a maximum of 12 kbar have been made at room temperature and analysed on a two-band model taking into account the pressure dependence of the Gamma 1c electron mobility. The analysis of the results of the pressure dependence is in good agreement with the analysis of the temperature dependence of the Gamma 1c electron mobility.

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