Low temperature low pressure MOCVD Al x Ga 1- x Aslayergrown as a dielectric for GaAs MIS devices
- 7 December 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (25) , 2219-2220
- https://doi.org/10.1049/el:19951513
Abstract
An oxygen doped AlxGa1-xAs layer is demonstrated as a dielectric for GaAs MIS structures. This layer is MOCVD grown at 550°C with an operating pressure of 10 torr. By keeping the aluminium content low, it is possible to obtain a dielectric with relatively high resistivity and very good interface quality.Keywords
This publication has 4 references indexed in Scilit:
- Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporationApplied Physics Letters, 1994
- Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET)Electronics Letters, 1983
- Investigation of heterojunctions for MIS devices with oxygen-doped AlxGa1−xAs on n-type GaAsJournal of Applied Physics, 1979
- Multidielectrics for GaAs MIS devices using composition-graded AlxGa1−xAs and oxidized AlAsApplied Physics Letters, 1979