GaN MESFETs for high-power andhigh-temperature microwave applications
- 16 March 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (6) , 498-500
- https://doi.org/10.1049/el:19950320
Abstract
The potential of microwave GaN MESFETs is evaluated using a harmonic-balance RF simulator for high-power and high-temperature applications. The simulated device performance (DC I/V characteristics and small-signal power gain) of a GaN FET is in good agreement with experimental data. It is demonstrated that the excellent electrical properties of GaN make it a viable alternative to SiC for microwave high-power and high-temperature applications.Keywords
This publication has 7 references indexed in Scilit:
- Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistorApplied Physics Letters, 1994
- Monte Carlo simulation of electron transport in gallium nitrideJournal of Applied Physics, 1993
- Conduction Mechanisms In Crystallized Silicon Films On Molybdenum SubstratesMRS Proceedings, 1993
- Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor depositionApplied Physics Letters, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applicationsProceedings of the IEEE, 1991
- Power semiconductor device figure of merit for high-frequency applicationsIEEE Electron Device Letters, 1989