Optical and near-infrared spectroscopy of neutral indium phosphide clusters
- 15 April 1990
- journal article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 92 (8) , 4759-4767
- https://doi.org/10.1063/1.457693
Abstract
Spectra are obtained for a wide distribution of sizes and stoichiometries of indium phosphide clusters using photodissociation techniques. These spectra are presented at two different cluster temperatures throughout the spectral range of 0.65 eV (1900 nm) to 2.0 eV (640 nm) for indium phosphide clusters containing from 5 to 14 atoms. Though the spectral behaviors of the clusters are found to be qualitatively similar, significant quantitative differences exist. A Rice–Ramsberger–Kassel–Marcus (RRKM) dissociation model employing significant fitting constraints is found to accurately describe the observed dissociation behaviors at both temperatures. Dissociation energies ranging from 2.0 to 2.4 eV are determined for the In5Py–In9Py clusters using the RRKM model. Experimental evidence suggests that the dissociation process involves loss of a small phosphorus containing moiety such as P1–2 or InP1–2. Results of the RRKM fitting process also clearly indicate that most of these InxPy clusters have nearly uniform absorption cross sections from 0.65 to 2.0 eV. This range extends well below the band gap of bulk InP. This is the first clear evidence of the presence of electronic states in closed shell semiconductor clusters at energies well below the band gap of the bulk material. Select clusters show significant deviations from pure RRKM behavior. Their behavior is consistent with the presence of spectral structure in their absorption cross sections in the energy range of 0.65–2.0 eV.Keywords
This publication has 32 references indexed in Scilit:
- Surface plasma resonances in free metal clustersPhysical Review B, 1989
- Photodissociation kinetics of aluminum cluster ions: Determination of cluster dissociation energiesThe Journal of Chemical Physics, 1989
- Preparation and observation ofclusters on a Au(001)-(5×20) surfacePhysical Review B, 1989
- Photodetachment and photofragmentation studies of semiconductor cluster anionsThe Journal of Chemical Physics, 1986
- Gas-phase spectroscopy and the properties of hydrogen-bonded dimers. HCN.cntdot..cntdot..cntdot.HF as the spectroscopic prototypeChemical Reviews, 1986
- Supersonic cluster beams of III–V semiconductors: GaxAsyThe Journal of Chemical Physics, 1986
- Silicon and germanium clusters. A theoretical study of their electronic structures and propertiesThe Journal of Chemical Physics, 1986
- Semiconductor cluster beams: One and two color ionization studies of Six and GexThe Journal of Chemical Physics, 1985
- Stabilization of surfaces of III-V compound crystals by molecular beamsJournal of Physics D: Applied Physics, 1975
- Phase Equilibria and Vapor Pressures of Pure Phosphorus and of the Indium/Phosphorus System and Their Implications Regarding Crystal Growth of InPJournal of the Electrochemical Society, 1974