Stabilization of surfaces of III-V compound crystals by molecular beams
- 11 May 1975
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 8 (7) , L87-L89
- https://doi.org/10.1088/0022-3727/8/7/001
Abstract
A technique for stabilizing crystal surfaces of III-V compounds against thermal decomposition by impinging molecular beams of group V dimers or tetramers on the surfaces is presented. The technique has been successfully applied to InP (100) surfaces. Other areas where it would find application are suggested.Keywords
This publication has 8 references indexed in Scilit:
- The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditionsJournal of Physics D: Applied Physics, 1974
- Growth of indium phosphide films from In and P2 beams in ultra-high vacuumJournal of Physics D: Applied Physics, 1974
- AES studies of arsenic vacancies in (
- The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam techniqueJournal of Physics and Chemistry of Solids, 1973
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971
- 3-5 compound photocathodes: A new family of photoemitters with greatly improved performanceProceedings of the IEEE, 1970
- GaAs, GaP, and GaAs[sub x]P[sub 1−x] Epitaxial Films Grown by Molecular Beam DepositionJournal of Vacuum Science and Technology, 1969
- Interaction of Ga and As2 Molecular Beams with GaAs SurfacesJournal of Applied Physics, 1968